电子电路设计代写 EE 311代写 Electronic Circuit Design代写

EE 311 Electronic Circuit Design II

Practice Exam

电子电路设计代写 Instructions: 1.This exam is close book, close notes. You may use a calculator but it may not be shared with anyone else during the exam.

Instructions:

1. This exam is close book, close notes. You may use a calculator but it may not be shared with anyone else during the exam. Devices that can communicate with the outside world are not allowed.
2. Show all work for partial-credit consideration.
3. Express answers in engineering notation to no more than 3 significant digits. Exponents should be a multiple of 3 and written as metric prefixes (p, n, μ, m, k, M, etc.) with units (V, A, Ω, W, etc.)
4. Neat and accurate circuit diagrams and small-signal models are required on exams that conform to IEEE standards for schematic drawings. Label device terminals (ebc or gsdb), components (r_π, R_L, etc.), and relevant voltages and currents (v_gs, v_i, v_o, etc.). Indicate connections on schematics with dots, as shown below. Refer to the problem figures for other examples.

Problem 1 电子电路设计代写

[5×3 pts=15 pts]

(a) Multiple choice questions :

(i) In the current mirror shown below, if (W/L)_Q2 : (W/L)_Q1 = 2:1 and (W/L)_Q4 : (W/L)_Q3 = 1:2 then I₀ is:

(a) I₀= I_ref

(b) I₀ = 2I_ref 

(c) I₀ = 4I_ref 

(d) I₀ = 0.5I_ref

(iii) In the following differential amplifier, if V_CM=1V then source potential V_S is

(a) 0V

(b) -1.5V

(c) -1.0V

(d) -2.0V

(iv) A BJT transistor operating in active mode has I_E = 1mA and I_B = 10µA, then β is

(a) 990

(b) 100

(c) 99

(d) 1

(v) In the common source amplifier circuits show below the relationship between overdrive voltages (VOV) of CS-x and CS-y is

(a) VOV of CS-y is 4 times than VOV of CS-x

(b) VOV of CS-y is 2 times than VOV of CS-x

(c) VOV of CS-y is same as VOV of CS-x

(d) VOV of CS-y is 0.5 times than VOV of CS-x

Problem 2 电子电路设计代写

[5×4=20 pts]

Consider the FET amplifier shown below for the case V_DD =1.8V, V_GS = 0.6V, k’_n(W/L) = 5mA/V² , V_t = 0.4V and R_D = 10kΩ. Note that V_DS is DC bias and v_gs is small signal voltage.

(a) Find the DC quantities I_D and V_DS.

(b) Calculate the value of g_m at the bias point

(c) Calculate the value of voltage gain.

(d) If the MOSFET has λ=0.1V^-1 , find r_o at the bias point and calculate the voltage gain.

Problem 3 电子电路设计代写

[20 pts]

(a) In a MOS cascode amplifier, the cascode transistor is required to raise the output resistance by a factor of 50. If the transistor is operated at VOV =0.2V, what must be its VA be?

(b) Find the gain of the following amplifier in terms of g_m and r_o of transistors (gm of Q₁ is g_m1, r_o of Q₁ is r_o1 and so on). (Hint: Think about output resistance of NMOS “Rn” and input resistance of PMOS “Rp”).

Problem 4

[10+15=25 pts]

In the circuit below I_D =100µA, all transistors have VOV =0.5V and VA = 3.6V. (µ_nC_ox = 4µ_pC_ox = 100µA/V² ).

(a) Find (W/L) of all transistors.

(b) Find the gain, input and output resistances.

Problem 5 电子电路设计代写

[20 pts]

Given the following data, calculate the G_m, R_O and A_vo of the amplifier circuit shown below: I =100µA, β=125, W/L=25, V_A =1.8V, µ_nC_ox = 400µA/V² .

Bonus Problem

[10 pts]

Assume Q3 and Q4 as well as Q1 and Q2 are identical and their output resistance is r₀. Compute the expression for differential gain.

Hints: (i) You can use half-circuit analysis. (ii) DC nodes can be grounded for small signal analysis.

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